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july 2002 the following document specifies spansion memory products that are now offered by both advanced micro devices and fujitsu. although the document is marked with the name of the company that orig- inally developed the specification, these products will be offered to customers of both amd and fujitsu. continuity of specifications there is no change to this datasheet as a result of offering the device as a spansion product. any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. future routine revisions will occur when appropriate, and changes will be noted in a revision summary. continuity of ordering part numbers amd and fujitsu continue to support existing part numbers beginning with ?am? and ?mbm?. to order these products, please use only the ordering part numbers listed in this document. for more information please contact your local amd or fujitsu sales office for additional information about spansion memory solutions. am30lv0064d data sheet publication number 22203 revision c amendment +4 issue date october 19, 2004 the am30lv0064d is not offered for new designs. please contact your spansion represen- tative for alternatives.
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publication# 22203 rev: c amendment/ +4 issue date: october 19, 2004 refer to amd?s website (www.amd.com) for the latest information. am30lv0064d 64 megabit (8 m x 8-bit) cmos 3.0 volt-only flash memo ry with ultranand? technology distinctive characteristics single power supply operation ? full voltage range: 2.7 to 3.6 volt read, erase, and program operations ? separate v ccq for 5 volt i/o tolerance automated program and erase ? page program: 512 + 16 bytes ? block erase: 8 k + 256 bytes block architecture ? 8 kbyte blocks + 256 byte spare area (separately erasable, readable, and programmable) ? 512 byte page + 16 byte spare area for ecc and other system overhead information fast read and program performance (typical values) ? read: < 7 s initial, < 50 ns sequential ? program: 200 s (full page program at 400 ns/byte) ? erase: < 2 ms/8 kbyte block pinout and package ? industry standard nand compatible pinout with 8-bit i/o bus and control signals ? tsop-ii 44/40 pin package (standard and reverse) with copper lead frame for higher reliability ? 40-ball fbga package provides higher reliability and ?packing density? command set ? basic command set: read data, read id, read status, input data, program data, block erase, reset ? superset commands: gapless sequential read data, erase suspend/resume operation status byte ? provides a software method of detecting program or erase operation completion, program/erase pass/fail condition, erase suspend status, and the write protect status operating current (typical) ? read: 10 ma (sequential) ? program: 10 ma ? erase: 10 ma ? standby: 10 a (cmos) block erase suspend/resume ? suspends an erase operation to read data from, or program data to, a block that is not being erased, then resumes the erase operation ready/busy# pin (ry/by#) ? provides a hardware method of detecting program or erase cycle completion wp# input pin ?at v il , the device is protected. program or erase operations in the device are inhibited ?at v ih , the device is unprotected. program and erase operations are allowed minimum 10,000 program/erase cycles guaranteed per block, without ecc (> 1 million cycles with ecc) 10-year data retention at 85 c industrial temperature range, ?40 c to +85 c 100% good blocks over product lifetime the am30lv0064d is not offered for new designs. please contact your spansion representative for alternatives.
4 am30lv0064d general description the am30lv0064d is a 64 mbit mass storage flash memory device, organized as 8 kbyte (+256 byte) blocks (1,024 blocks total), each with 16 pages of 512 (+16) bytes (16,384 pages total). the device is suited to high-density applications in which data is sequential and requires frequent, fast write capability. the ultranand? block and page ar - chitecture is capable of accommodating applications requiring ide disk drive-compatible blocks. each device requires only a single 3.0 volt power supply for read, program, and erase functions. inter - nally generated and regulated voltages are provided for program and erase operations. a v ccq pin is pro - vided to allow 5 volts to be applied to the output buffer logic. with 5 volt tolerant inputs, the v ccq pin provides the flash device with 5 volt tolerant i/o. the am30lv0064d is entirely command set compati - ble with industry standard nand instructions and timing. commands are written to the command regis - ter through the 8-bit i/o bus using standard nand write timing. register contents serve as inputs to an internal state-machine that controls the read, erase, and programming circuitry. write cycles also internally latch addresses and data needed for the read, program - ming, and erase operations. reading data out of the device is similar to reading from nand flash devices. the device has an initial page read access time of 7 s, with subsequent byte accesses of less than 50 ns per byte. device programming occurs on a page basis by exe - cuting the input data and program data command sequences. this initiates the embedded program al - gorithm?an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. device erasure is performed on a block basis and occurs by executing the block erase command sequence. this initiates the embedded erase algorithm?an internal algorithm that automatically executes the erase operation. during erase, the device automatically times the erase pulse widths and verifies proper cell margin. the block erase architecture allows memory blocks to be erased and reprogrammed without affecting the data contents of other blocks. the erase suspend/erase resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any block that is not selected for erasure. true background erase can thus be achieved. the device is fully erased when shipped from the factory. the host system can detect whether a sequential read, program, or block erase operation is complete by ob - serving the ry/by# pin or by reading the status register . after a program or erase cycle has been com - pleted, the device is ready to accept another command. hardware data protection is provided by a write pro - tect (wp#) input pin which inhibits all program and erase operations when asserted (low). the device offers a standby mode as a power-saving feature. once the system places the device into the standby mode power consumption is greatly reduced. amd?s flash technology combines years of flash memory manufacturing experience to produce the high - est levels of quality, reliability and cost effectiveness.
am30lv0064d 5 table of contents am30lv0064d ................................................. 1 continuity of specifications ...................................................... 1 continuity of ordering part numbers ....................................... 1 for more information ................................................................ 1 this page left intentionally blank. . . . . . . . . . . . . 2 am30lv0064d ................................................. 3 general description . . . . . . . . . . . . . . . . . . . . . . . . 4 product selector guide . . . . . . . . . . . . . . . . . . . . . 6 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 connection diagrams . . . . . . . . . . . . . . . . . . . . . . . 7 special handling instructions ................................................... 8 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 9 functional pin description . . . . . . . . . . . . . . . . . 10 input/output pins (i/o7?i/o0) ................................................. 10 command latch enable (cle) ............................................... 10 address latch enable (ale) .................................................. 10 chip enable (ce#) .................................................................. 10 read enable (re#) ................................................................ 10 write enable (we#) ................................................................ 10 write protect (wp#) ................................................................ 10 spare area enable (se#) ....................................................... 10 ready/busy output (ry/by#) ................................................ 10 device power supply (v cc ) .................................................... 10 output buffer power supply (v ccq ) ........................................ 10 ground (v ss ) .......................................................................... 10 cell layout and address assignment . . . . . . . . 11 figure 1. mass storage device cell layout.................................... 11 table 1. address assignment .........................................................11 ordering information . . . . . . . . . . . . . . . . . . . . . . 12 device bus operations, command set, and command definitions . . . . . . . . . . . . . . . . . . . . . . 13 table 2. am30lv0064d device bus operations ............................13 table 3. am30lv0064d command set ..........................................13 table 4. am30lv0064d command definitions ..............................14 device operations . . . . . . . . . . . . . . . . . . . . . . . . 15 read operations .................................................................... 16 read data (00h / 01h) ............................................................ 16 figure 2. read data........................................................................ 16 gapless read (02h) (superset command) ............................ 17 figure 3. gapless read .................................................................. 17 read spare area (50h) .......................................................... 18 figure 4. read spare area ............................................................. 18 read id (90h) ......................................................................... 19 table 5. am30lv0064d id codes ..................................................19 figure 5. read id............................................................................ 19 read status (70h) .................................................................. 20 figure 6. device status register bit definition ............................... 20 figure 7. read status ..................................................................... 20 program operations ............................................................... 20 input data (80h) ...................................................................... 20 page program (10h) ............................................................... 21 figure 8. input data and page program ......................................... 21 figure 9. program operations flow chart ...................................... 22 erase operations .................................................................... 23 block erase (60h) (d0h) ......................................................... 23 figure 10. block erase.................................................................... 23 erase suspend (b0h) (superset co mmand) .......................... 23 erase resume (d0h) (superset command) ........................... 23 figure 11. erase suspend and erase resume.............................. 24 reset operation ..................................................................... 25 reset (ffh) ............................................................................. 25 figure 12. reset............................................................................. 25 absolute maximum ratings . . . . . . . . . . . . . . . . 26 figure 13. maximum negative overshoot waveform .................... 26 figure 14. maximum positive overshoot waveform...................... 26 operating ranges . . . . . . . . . . . . . . . . . . . . . . . . 26 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . 27 table 6. test specifications ........................................................... 27 figure 15. test setup..................................................................... 27 ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . 28 command, data, and address input ...................................... 28 normal operation ................................................................... 28 mode selection ....................................................................... 29 key to switching waveforms . . . . . . . . . . . . . . . 29 figure 16. command input cycle .................................................. 30 figure 17. address input cycle...................................................... 30 figure 18. data input cycle ........................................................... 31 figure 19. serial read cycle ......................................................... 31 figure 20. status read cycle ........................................................ 32 figure 21. read data..................................................................... 32 figure 22. read data (interrupted by ce#) ................................... 33 figure 23. read spare area .......................................................... 33 figure 24. sequential read ........................................................... 34 figure 25. page program............................................................... 34 figure 26. block erase................................................................... 35 figure 27. erase suspend ............................................................. 35 figure 28. erase resume .............................................................. 36 figure 29. sequential page program............................................. 36 figure 30. id and manufacturer read............................................ 37 figure 31. write protect (wp#) timing during power transitions. 37 program and erase characteristics . . . . . . . . . 38 valid blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 latchup characteristics . . . . . . . . . . . . . . . . . . . . 38 tsop ii pin capacitance . . . . . . . . . . . . . . . . . . . 38 data retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 physical dimensions . . . . . . . . . . . . . . . . . . . . . . 39 ts 044?44/40-pin standard thin small outline package ii . 39 tsr044?44/40-pin reverse thin small outline package ii . 40 fbe040?40-ball fine pitch ball grid array (fbga) 8 x 15 mm package ................................................................ 41 revision summary . . . . . . . . . . . . . . . . . . . . . . . . 42 revision a (december 1998) .................................................. 42 revision b (december 1998) .................................................. 42 revision b+1 (january 1999) ................................................. 42 revision b+2 (february 1999) ................................................ 43 revision b+3 (march 8, 1999) ................................................ 43 revision b+4 (april 21, 1999) ................................................. 43 revision b+5 (june 17, 1999) ................................................ 43 revision c (may 19, 2000) ..................................................... 43 revision c+1 (june 23, 2000) ................................................ 43 revision c+2 (august 14, 2000) ............................................. 43 revision c+3 (october 6, 2000) ............................................. 43
6 am30lv0064d product selector guide note: see ?ac characteristics? for full specifications. block diagram family part number am30lv0064d option j40 number of usable blocks guaranteed 1024 percentage of usable blocks guaranteed 100% high voltage pumps state machine command register ale address register status register y-decoder data register & s/a ce# re# we# i/o register & buffer data register & s/a y-decoder x decoder memory array i/o7-0 ry/by # cle se# wp# v cc v ccq v ss
am30lv0064d 7 connection diagrams 1 16 2 3 4 5 6 7 8 17 18 19 20 21 22 9 10 11 12 13 14 15 44 29 43 42 41 40 39 38 37 36 35 34 33 32 31 30 28 27 26 25 24 23 v ss nc cle ale we# wp# rfu nc nc nc nc nc nc nc nc i/o0 i/o1 i/o2 i/o3 v ss v cc nc ce# re# ry/by# se# nc nc nc nc i/o7 i/o6 i/o5 i/o4 v ccq nc nc nc nc nc 44/40-pin standard tsop-ii 1 16 2 3 4 5 6 7 8 17 18 19 20 21 22 9 10 11 12 13 14 15 44 29 43 42 41 40 39 38 37 36 35 34 33 32 31 30 28 27 26 25 24 23 v ss nc cle ale we# wp# rfu nc nc nc nc nc nc nc nc i/o0 i/o1 i/o2 i/o3 v ss v cc nc ce# re# ry/by# se# nc nc nc nc i/o7 i/o6 i/o5 i/o4 v ccq nc nc nc nc nc 44/40-pin reverse tsop-ii
8 am30lv0064d connection diagrams (continued) note: the ball grid array is depopulated to 40 signal balls. the maximum package height is 1.2 mm. the 9 x 9 x 9 x 9 outrigger balls (shaded) may be required for higher density devices in larger packages. the shaded ball region should be treated as a ?keep out? area with pads placed to allow larger devices to be accommodated. special handling instructions special handling is required for flash memory prod - ucts in fbga packages. flash memory devices in fbga packages may be damaged if exposed to ultrasonic cleaning methods. the package and/or data integrity may be compro - mised if the package body is exposed to temperatures above 150 c for prolonged periods of time. abcdef ghj k 1 2 3 4 5 6 0.8 0.8 0.8 0.8 1.6 0.8 ?0.400 mm 0.250 smd, ball = 0.3 mm nc v cc nc nc nc nc nc nc v ccq nc nc ce# re# ry/by# se# io7 io6 io5 io4 nc nc cle ale we# wp# io0 io1 io2 io3 nc nc v ss nc nc rfu nc nc nc v ss nc 15 mm 8 mm 40-ball fbga top view, balls facing down
am30lv0064d 9 pin configuration i/o7?i/o0 = 8 inputs/outputs ce# = chip enable input re# = read enable input we# = write enable input se# = spare area enable input ale = address latch enable input cle = command latch enable input wp# = write protect input ry/by# = ready/busy output (open drain) v cc = 3.0 volt-only single power supply for the flash device core (see product selector guide for volt age supply tolerances) v ccq = single power supply for output buffers (see v ccq signal description) v ss = device ground nc = pin not connected internally rfu = reserved for future use logic symbol ce# re# we# se# ale cle wp# i/o7?i/o0 ry/by# 8
10 am30lv0064d functional pin description input/output pins (i/o7?i/o0) the eight i/o pins are used to send commands, ad - dresses, and data to the device, and to receive data during read operations. command latch enable (cle) the cle input controls activation of the command reg - ister for the receipt of commands. when cle is high, the command is latched into the command register on the rising edge of the write enable (we#) signal. address latch enable (ale) the ale input controls activation of the address register during the address latch operation, or the data register during the input data operation. when ale is high, the address information is latched on the rising edge of the write enable (we#) signal. when ale is low (and the cle input is low) the input data information is latched on the rising edge of the write enable (we#) signal. ale must remain high for the entire address sequence or device will reset. chip enable (ce#) the ce# input controls the active/standby mode dur - ing command, data, and address inputs. during the command and address latch operations, ce# must be low prior to the falling edge of write enable (we#). during input data operations, ce# must remain low until after the rising edge of we# during the final data in operation. when ce# is high, and an internal opera - tion is not in process, the device goes into standby mode and current consumption is greatly reduced. the ce# signal is ignored during program or erase op - eration, as indicated by the busy state (ry/by# = low). read enable (re#) the re# input controls the serial data output and sta - tus from the i/o lines. the data output is triggered on the falling edge of re#, with valid data available after a delay of t rea . the status output data is also triggered on the falling edge of re#, with the status available after a delay of t rls . write enable (we#) the we# input is used to control the data/command on the i/o lines during write operations. the i/o lines are latched on the rising edge of the we# signal. write protect (wp#) the wp# input provides protection from inadvertent program/erase commands. the internal voltage regu - lator is reset when wp# is low, thereby preventing any program or erase operations from occurring. the wp# input should be kept low (v il ) during power-up until v cc is above v cc -min. during power-down wp# should be driven low (v il ) before v cc is below v cc -min. spare area enable (se#) the se# input controls access to the 16 bytes of spare area on each page. when se# is not asserted (high), the spare area for the selected page is not enabled, and all input or output data is directed towards the pri - mary 512 byte storage space. when se# is asserted (low), access to the spare area is enabled, and data can be transferred to or from the 16 bytes of spare area for the appropriate page as needed. with se# asserted (low) information can still be transferred to or from the 512 byte main flash page, but when the end of the page is reached (byte 511) the device will auto - matically begin transferring information to or from the spare area. during the read spare area command sequence (50h) the se# input must be asserted (low) during the command phase (cle high). in all other cases when the spare area is to be accessed, the se# input must be asserted (low) at least two access cycles prior to the spare area access. this would require the se# input to be low by the time byte address 510 is se - lected, and se# must remain low during the entire period that the spare area is accessed. ready/busy output (ry/by#) the ry/by# output indicates the operation status of the device. when ry/by# is high, the device is ready to accept the next operation. when ry/by# is low, an internal program, erase, or random read operation is in progress. ry/by# is an open drain output pin which allows multi - ple ry/by# pins to be wire-ored together. the ry/by# output pin requires an external pull-up resistor to v cc (or v ccq ) for proper operation. device power supply (v cc ) the minimum v cc operating voltage for the am30lv0064d is 2.7 volts. the device has an operat - ing voltage range from 2.7 volts to 3.6 volts. output buffer power supply (v ccq ) the output voltage generated on the device is deter - mined based on the v ccq power supply input level. a v ccq of 2.7 to 3.6 volts will allow the device to function as a 3.0 volt-only device. a v ccq of 4.5 to 5.5 volts provides 5 volt i/o tolerance. all input only signals are 5 volt tolerant by design, in - dependent of the voltage on v ccq . ground (v ss ) the v ss pins on the device must be grounded.
am30lv0064d 11 cell layout and address assignment note: device programming is executed on a page basis while erase is performed on a block basis. during read operations, data is transferred from the flash array to the internal data register on a page basis. data is then sequentially read from the data register on a byte basis. figure 1. mass storage device cell layout table 1. address assignment legend: axx = specific address bit, x = don?t care (v ih or v il ) notes: 1. a8 is automatically set ?low? or ?high? by the 00h or 01h command. 2. a22 to a13 specifies the block address, a12 to a9 specifies the page address within a block, and a7 to a0 identifies the byte address within half a page. i/o 7 i/o 6 i/o 5 i/o 4 i/o 3 i/o 2 i/o 1 i/o 0 first cycle a7 a6 a5 a4 a3 a2 a1 a0 second cycle a16 a15 a14 a13 a12 a11 a10 a9 third cycle x x a22 a21 a20 a19 a18 a17 256 16 16,384 pages (1,024 blocks) flash memory array 512 + 16 byte data register i/o 7 i/o 0 ~ 16 pages (1 block) 528 bytes (1 page) 256
12 am30lv0064d ordering information standard products amd standard products are available in several packages and operating ranges. the ordering part number or opn (valid combination) is formed by a combination of the elements below. valid combinations valid combinations list configurations planned to be support - ed in volume for this device. consult the local amd sales of - fice to confirm availability of specific valid combinations and to check on newly released combinations. am30lv0064d j40 e2 i t packing method t = tape and reel temperature range i = industrial (?40 c to +85 c) package type e2 = 44/40-pin thin small outline package (tsop-ii) standard pinout (ts 044) f2 = 44/40-pin thin small outline package (tsop-ii) reverse pinout (tsr044) wg = 40-ball fine pitch ball grid array (fbga) 0.80 mm pitch, 8 x 15 mm package (fbe040) performance range j40 = 1024 (100%) usable blocks device number/description am30lv0064d 64 megabit (8 m x 8-bit) cmos 3.0 volt flash memory with ultranand? technology 2.7?3.6 volt with 5 volt i/o tolerance valid combinations for tsop packages am30lv0064dj40 e2i, f2i valid combinations for fbga packages order number package marking am30lv0064dj40 wgi l064dj40v i
am30lv0064d 13 device bus operations, command set, and command definitions this section describes the requirements and use of the device bus operations, the command set, and the command definitions. the device bus operations are initiated through the internal command register which decodes the command to determine the current opera - tion to be performed. the command register itself does not occupy any addressable memory location. the register is composed of latches that store the commands, along with the address and data informa - tion needed to execute the command. the contents of the register serve as inputs to the internal state ma - chine whose outputs dictate the function of the device. table 2 lists the device bus operations including the in - puts and control levels they require, and the resulting output. table 3 lists the command set, and table 4 lists the command definitions. the ?device operations? section describes each of these operations in detail. table 2. am30lv0064d device bus operations legend: l = logic low = v il , h = logic high = v ih , x = don?t care, a in = address in, c in = command in, d in = data in, d out = data out note: if wp# = v il , the flash device is protected and will not allow program or erase operations to occur. if wp# = v ih , the device is unprotected and may be programmed or erased. table 3. am30lv0064d command set operation ce# re# we# se# cle ale wp# i/o7?i/o0 read data area l l h l/h l l x d out read spare area l l h l l l x d out read id, status l l h x l l x d out write data l h l l/h l l x d in write command l h l x h l x c in write address l h l x l h x a in standby v cc 0.3 v x x v cc 0.3 v v ss 0.3 v x x v cc 0.3 v v ss 0.3 v high-z write protect x x x x x x (see note) x operation cycle 1 cycle 2 valid during busy read data 00h/01h ? no gapless read 02h ? no read spare area 50h ? no read id 90h ? no read status 70h ? yes input data 80h ? no page program 10h ? no block erase 60h d0h no erase suspend b0h ? yes erase resume d0h ? no reset ffh ? yes
14 am30lv0064d table 4. am30lv0064d command definitions legend: wr = write cycle byte, rd = read cycle, sa = starting address, etc. = previous sequence continues as needed, sr = status register, ar = address register, dr = data register, ba = block address byte notes: 1. all values are in hexadecimal. 2. see table 2 for description of bus operations. 3. the gapless read command is similar to the read data area commands except that the 7 s latency does not occur when the page address pointer steps to the next page to be read. this command requires that the starting byte address is located within the first half of the selected page. 4. for the read spare area command it is necessary for the se# pin to be low during the cle cycle and when actively reading from the 16 byte spare area. for all other commands the se# pin must be low at least two cycles prior to the first spare area access at byte address 512 (low before byte address 510). 5. the two byte block address cycles load address bits a22?a9 into the device. since only address bits a22?a13 are required for a block address, address bits a12?a9 are don?t care. 6. the system may read and program in non-erasing blocks when in the erase suspend mode. the erase suspend command is valid only during a block erase operation. 7. the erase resume command is valid only during the erase suspend mode 8. the fifth bus cycle for read operations follows the read latency delay. command sequence (note 2) bus cycles (note 1) first second third fourth fifth (note 8) sixth oper. data oper. data oper. data oper. data oper. data oper. data read data area?first half page wr 00 wr sa wr sa wr sa rd data etc. etc. read data area?second half page wr 01 wr sa wr sa wr sa rd data etc. etc. read data area?gapless read (note 3) wr 02 wr sa wr sa wr sa rd data etc. etc. read spare area (note 4) wr 50 wr sa wr sa wr sa rd data etc. etc. read id wr 90 wr 00 rd 01 rd e6 read status wr 70 rd sr etc. etc. input data wr 80 wr sa wr sa wr sa wr data etc. etc. program data wr 10 block erase (note 5) wr 60 wr ba wr ba wr d0 erase suspend (note 6) wr b0 erase resume (note 8) wr d0 reset wr ff
am30lv0064d 15 device operations when the amd mass storage flash device powers up, the command decoder is initialized to a wait for command state. in order to perform any function, the device must be programmed for the desired operation. specific commands must be issued to the device to select one of the read modes, to input or program data, to perform one of the block erase functions, or to reset the device. there are a number of commands available for read - ing information from the ultranand flash device. these include read data to read out of the flash ar - ray, gapless read to read data in a special high performance mode, read spare area to read the 16 byte spare area in each page, read id to determine the manufacturer and device id, and read status to check the device status. programming data into the flash array is a two step process and requires that two separate command se - quences be performed. the data to be programmed must first be loaded into the data registers using the input data command sequence. after the data is loaded the page program command is performed to transfer the information from the data registers to the flash array. device erasure occurs on an 8 kbyte block basis, with each block in the device containing 16 pages and the respective spare area for each page. during block erase, the flash device supports erase suspend and erase resume to allow time critical tasks to be per - formed. these time critical tasks can be to read or program in a block that is not currently selected for erasure. the flash device also supports a reset command se - quence to reset the device and return it to the wait for command state. all of the commands and their functions supported by the flash device are described in the following sub-sections with simplified timing diagrams included. the timing diagrams are intended to illustrate the rela - tionship of each of the control, status, and data signals for each of the command sequences. please refer to the ac/dc characteristics section for more complete timing information. in each of the simplified timing diagrams, the polling period during device busy (ry/by# = v il ) is not shown. during device busy the system can poll the de - vice internal status register or monitor the ry/by# pin to determine when the internal operation is complete.
16 am30lv0064d read operations read data (00h / 01h) there are two commands available for reading from the flash array (via the data registers). these are read data?(starting with the) first half page (00h) and read data?(starting with the) second half page (01h). the commands are identical except for the starting re - gion within the selected page. after the command cycle, three address cycles are used to input the start - ing address for the read operation. upon the rising edge of the final we# pulse there is a 7 s latency in which 528 bytes of information are transferred from the flash array page to the 528 byte data register. during the 7 s latency period the flash device will ap - pear busy and either the ry/by# signal or the status register may be used to monitor the completion of the data transfer. only the reset and read status com - mands are valid during the period that the device is busy. once the information has been loaded into the data register, it may be sequentially read with con - secutive 50 ns re# pulses. each re# pulse will automatically advance the column address by one. once the last column has been read, the page address will automatically increment by one and the data regis - ter will be updated with information from the new page after a 7 s latency period. during the sequential read mode, if the spare area enable input (se#) is high, the column address will ad - vance to address 511 and then the page address will increment by one. if the se# input is low, the column address will advance to address 527 before the page address is incremented. this allows information in the spare area to be read at the end of the page before the next page of information is transferred into the data registers. in the case of the read data com - mand, the se# input may go low anytime from before the command is issued to before address 510 is ac - cessed. this allows the flash internal logic to correctly enable the spare area for reading. notes: 1. ce# is don?t care in between we# and re# transitions. 2. falling edge of ce# to valid data must be >45 ns. 3. ce# transition when ry/by# is low terminates read operation. 4. ale must remain high for entire address latch operation; no transitions allowed. figure 2. read data ce# cle ale we# re# i/o7-0 se# r y/by# cmd start address read page read next page read next page data transfer data transfer data transfer read data (00h or 01h)
am30lv0064d 17 gapless read (02h) (superset command) the gapless read command is almost identical to the read data command, except that it allows reading from multiple pages with only one 7 s latency occur - ring on the first page transfer. after the command cycle is used to write the gapless read op-code to the device, three address cycles are used to input the starting address for the gapless read operation. the gapless read operation requires that the address entered specifies an address location in the first half of the selected page. upon the rising edge of the final we# pulse there is a 7 s latency in which 528 bytes of information are transferred from the flash array page to the 528 byte data register. during this 7 s period the device will appear busy and either the ry/by# signal or the status register may be used to monitor the completion of the data transfer. only the reset and read status commands are valid during the period that the device is busy. once the informa - tion has been loaded into the data register, it may be sequentially read with consecutive 50 ns re# pulses. each re# pulse will automatically advance the column address by one. once the last column has been read, the page address will automatically increment by one and the data register will be updated with the new page. in the case of the gapless read, there is no 7 s la - tency period encountered when moving from the current page to the next sequential page. during the sequential read mode, if the spare area enable input (se#) is high, the column address will ad - vance to address 511 and then the page address will increment by one. if the se# input is low, the column address will advance to address 527 before the page address is incremented. this allows information in the spare area to be read at the end of the page before the next page of information is transferred into the data registers. this is an amd superset command which is not avail - able on competitive devices in the marketplace. notes: 1. ce# is don?t care in between we# and re# transitions. 2. falling edge of ce# to valid data must be >45 ns. 3. ce# transition when ry/by# is low terminates read operation. 4. ale must remain high for entire address latch operation; no transitions allowed. figure 3. gapless read ce# cle ale we# re# i/o7-0 se# ry/by# cmd start address read page read next page read next page data transfer gapless read (02h)
18 am30lv0064d read spare area (50h) the read spare area command is similar to the read data command, except that it only reads information from the selected page 16 byte spare area (address locations 512 through 527). after the command cycle is used to write the read spare area op-code to the device, three address cycles are used to input the starting address for the read operation. during the read spare area command cycle the se# input must be low. because the read spare area operation only reads the 16 byte spare area in the page, address bits a7?a4 are don?t care. address bits a22?a9 are used to select the page, and address bits a3?a0 are used to select the starting byte within the spare area of the page. upon the rising edge of the final we# pulse there is a 7 s latency in which all 528 bytes of infor - mation are transferred from the flash array page to the 528 byte data register. following the data transfer the internal address pointer will point to the byte se - lected in the spare area. during the 7 s data transfer period the device will appear busy and the ry/by# signal or the status register may be used to monitor the completion of the data transfer. only the reset and read status commands are valid during the period that the device is busy. once the information has been loaded into the data register, the spare area informa - tion may be sequentially read with consecutive 50 ns re# pulses. each re# pulse will automatically ad - vance the spare area column address by one. once the last column has been read, the page address will automatically increment by one and the data register will be updated with the new page after a 7 s latency. during the sequential read mode, the spare area en - able input (se#) must be low. this is necessary any time the spare area is being read. in this operation, the column address will advance from the selected starting byte location to address 527 before the page address is incremented. after the next page of infor - mation is transferred to the data register, sequential read operations will begin in the data register at ad - dress location 512. unlike the read data and gapless read modes, the read spare area operation requires that the se# input be asserted low prior to the com - mand being issued to the device. figure 4. read spare area ce# cle ale we# re# i/o7-0 se# ry/by# cmd start address read spare area read next spare area read next spare area data transfer data transfer data transfer read spare area (50h)
am30lv0064d 19 read id (90h) the read id operation is used to read the manufactur - ers id and the device id from the flash device. after the command cycle, one address cycle is used to input a 00h value into the device. upon the rising edge of the final we# pulse, the two bytes of information may be sequentially read with two consecutive 50 ns re# pulses. table 5. am30lv0064d id codes figure 5. read id i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 i/o0 id code manufacturer 0 0 0 0 0 0 0 1 01h device 1 1 1 0 0 1 1 0 e6h ce# cle ale we# re# i/o7-0 se# ry/by# cmd 00h manufacturer?s id device id read id (90h)
20 am30lv0064d read status (70h) the read status operation is used to read the device status to determine if the device is ready, in the write protect mode, erase suspended, or if the previous pro - gram/erase operation completed without error. after the rising edge of the command cycle we# pulse, the falling edge of ce# or re#, whichever occurs last, will output the contents of the status register on the 8 i/o pins, i/o7?i/o0. the status register is constantly up - dated and does not require either ce# or re# to be toggled. by utilizing the read status operation, multi - ple devices with ry/by# pins wired together may be polled to determine their specific status. figure 6. device status regi ster bit definition figure 7. read status program operations input data (80h) the input data command sequence is the first of two operations that must be performed to program infor - mation into one of the flash pages. the second operation, page program, is used to transfer informa - tion from the data registers to the flash array after the input data procedure loads the data registers. in order to set the starting region within the data regis - ters (first half, second half, or spare area), the appropriate command (00h, 01h, 50h) should be is - sued prior to the input data command being performed. if a command is not submitted to assign the starting region, the starting region will be deter - mined by its previous state. i/o7 i/o6 i/o5 i/o4 i/o3 i/o2 i/o1 i/o0 program/erase: 0 = pass, 1 = fail not used erase suspend: 0 = not suspended, 1 = suspended ready/busy: 0 = busy, 1 = ready write protect: 0 = protected, 1 = not protected ce# cle ale we# re# i/o7-0 se# ry/by# cmd read status read status read status read status read status (70h)
am30lv0064d 21 after the command cycle, three address cycles are used to input the starting address for the input data operation. upon the rising edge of the final we# pulse, between 1 and 528 bytes of information can be loaded into the data register with consecutive 50 ns we# pulses. each we# pulse will automatically advance the data register address pointer by one. if additional write pulses are issued after the last address has been written (511 if se# is high or 527 if se# is low), the data register address pointer will wrap around to 0. if additional we# pulses are is sued, the device will con - tinue to store information into the data register until a new command is issued. the spare area enable input (se#) must be low by the time address 510 is accessed in order to load in - formation into the last 16 bytes of the data register. if the se# input is high, the data register address will advance to address 511. if the se# input is low, the column address will advance to address 527. this al - lows information that needs to be programmed into the spare area of the page to be loaded into the data reg - isters properly. please refer to figure 8 for the simplified timing diagram for input data and page program. page program (10h) the page program command sequence is issued after the input data operation has loaded the proper data in the data registers. upon the rising edge of the command cycle we# pulse, this operation typically transfers in - formation from the data registers to the flash array in 200 s or less, and the flash device will appear busy during the data transfer operation. the ry/by# signal or the status register may be used to monitor comple - tion of the data transfer. only the reset and read status commands are valid during the period that the device is busy. only those bytes loaded with the input data command sequence will be programmed in the flash array. this allows partial page programming to be performed as needed. if no bytes were loaded into the data regis - ter, or if the page program command is issued without the input data command being performed, no program operation will occur. unless ecc has been imple - mented, a given page may not be reprogrammed without an intervening erase operation being per - formed on the block that contains that page. after programming a page, the status register bit i/o0 should be checked to verify that the program operation completed properly. the spare area enable input (se#) must be low in order to program information into the last 16 bytes of the page that is selected for programming. if the se# input is high, the spare area will not be programmed. please refer to figure 8 for the simplified timing diagram for input data and page program and to figure 9 for a flow chart describing the device program procedure. notes: 1. ce# is don?t care in between we# and re# transitions. 2. falling edge of ce# to valid data must be >45 ns. 3. ale must remain high for entire address latch operation; no transitions allowed. figure 8. input data and page program ce# cle ale we# re# i/o7-0 se# ry/by# cmd start address write page data (and spare area if required) cmd low to write spare area page program input data (80h) page program (10h)
22 am30lv0064d figure 9. program operations flow chart read status register or monitor r/b# pin program successful write a byte of data write the starting address to the flash start write the input data command (80h) to the flash device write the address pointer command (00h, 01h) to place pointer in proper half-page last data byte written ? yes no write the program data command (10h) to the flash device is device busy ? no yes read status register is i/o0 = 0 ? yes no done program failed may be required to exceed guaranteed endurance done use user defined procedure to identify the failed byte implement error correction as appropriate
am30lv0064d 23 erase operations block erase (60h) (d0h) the block erase command sequence is a two com - mand operation procedure that must be performed to erase information in one of the 16 page flash blocks. after the first command cycle, two address cycles are used to input the block address for the block to be erased. since the block address only requires address bits a22?a13 to determine the block address, bits a12?a9 are don?t care. after the two address cycles are complete, the second command cycle is issued. upon the rising edge of the final we# pulse for the second command cycle, the flash device will begin the block erase operation. a block typically erases in the flash array in 2 ms or less and is guaranteed to erase within 10 ms. the flash device appears busy during the block erase op - eration and either the ry/by# signal or the status register may be used to monitor completion of the erase. only the erase suspend, reset, and read sta - tus commands are valid during the period that the device is busy. after erasing a block, the status register bit i/o0 should be checked to verify that the erase operation completed properly. figure 10 shows the simplified timing for block erase. figure 10. block erase erase suspend (b0h) (superset command) the erase suspend command sequence is only valid during a block erase operation. upon the rising edge of the command we# pulse, the flash device will sus - pend the block erase operation. either the ry/by# signal or the status register may be used to determine when the block erase has actually been suspended. once the erase suspend has taken effect, read or program operations may be performed in blocks that are not selected for erasure. once a block erase has been suspended, the sus - pended block erase operation must be completed before another block can be selected for erasure. when the erase suspend command is issued, the block erase command is inhibited. the block erase will be invalid until an erase resume command allows the suspended erase to complete, the device is reset, or power is removed from the device. refer to figure 11 for a simplified timing diagram showing the se - quence of events required to implement erase suspend during a block erase operation. this is an amd superset command which is not available on competitive devices in the marketplace. erase resume (d0h) (superset command) the erase resume command sequence is only valid during an erase suspend operation. upon the rising ce# cle ale we# re# i/o7-0 se# ry/by# cmd block address block erase block erase setup (60h) cmd block erase (d0h)
24 am30lv0064d edge of the command we# pulse, the flash device will resume the block erase operation that was sus - pended. either the ry/by# signal or the status register may be used to determine when the block erase completes. after the block finishes the erase operation, the status register bit i/o0 should be checked to verify that the erase completed properly. figure 11 is a simplified timing diagram that describes how to execute an erase re - sume operation during erase suspend to allow the previously suspended block erase to complete. this is an amd superset command which is not available on competitive devices in the marketplace. figure 11. erase suspend an d erase resume ce# cle ale we# re# i/o7-0 se# ry/by# cmd block address begin block erase complete block erase cmd block erase setup (60h) block erase (d0h) erase resume (d0h) as appropriate cmd block erase suspended here read or program operations may be performed cmd erase suspend (b0h)
am30lv0064d 25 reset operation reset (ffh) the reset command sequence can be issued any time the flash device needs to be initialized. this may be required when the device is busy during program, erase, or data transfer operations. reset will take place on the rising edge of the command cycle we# pulse. if the wp# input is high, not protected, the sta - tus register will be set to c0h. if a second reset command is issued while a reset is in process, the second reset command will be ig - nored. if a reset command is issued during a program or erase operation, the internal high voltages will be discharged before the device indicates that it is ready (reset complete). either the ry/by# signal or the status register may be used to determine when the reset operation is done. figure 12 shows a simplified timing diagram of the reset command sequence. figure 12. reset ce# cle ale we# re# i/o15-0 se# ry/by# cmd reset in progress reset (ffh)
26 am30lv0064d absolute maximum ratings storage temperature plastic packages . . . . . . . . . . . . . . . ?65 c to +150 c ambient temperature with power applied . . . . . . . . . . . . . ?65 c to +125 c voltage with respect to ground v cc (note 1) . . . . . . . . . . . . . . . . . ?0.5 v to +4.0 v v ccq (note 2) . . . . . . . . . . . . . . . . ?0.5 v to +6.0 v all other pins (note 1) . . . . . . ?0.5 v to v cc +0.5 v output short circuit current (note 3) . . . . . . 200 ma notes: 1. minimum dc voltage on input or i/o pins is ?0.5 v. during voltage transitions, input or i/o pins may overshoot v ss to ?2.0 v for periods of up to 20 ns. maximum dc voltage on input or i/o pins is v cc +0.5 v. see figure 13 . during voltage transitions, input or i/o pins may overshoot to v cc +2.0 v for periods up to 20 ns. see figure 14 . 2. for 3.0 volt-only applications, v ccq should be connected to v cc . to provide 5 v tolerant i/o, v ccq should be between 4.5 and 5.5 v. 3. no more than one output may be shorted to ground at a time. duration of the short circuit should not be greater than one second. stresses above those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. operating ranges commercial (c) devices ambient temperature (t a ) . . . . . . . . . . . 0 c to +70 c industrial (i) devices ambient temperature (t a ) . . . . . . . . . ?40 c to +85 c v cc supply voltages v cc for full voltage range . . . . . . . . . . . . 2.7 v to 3.6 v v ccq supply voltages v ccq for full voltage range . . . . . . . . . . . 2.7 v to 3.6 v v ccq for 5 volt i/o tolerance. . . . . . . . . . 4.5 v to 5.5 v operating ranges define those limits between which the functionality of the device is guaranteed. 20 ns 20 ns +0.8 v v ss ?0.5 v 20 ns v ss ?2.0 v figure 13. maximum negative overshoot waveform figure 14. maximum positive overshoot waveform 20 ns 20 ns v cc +2.0 v v cc +0.5 v 20 ns 2.0 v
am30lv0064d 27 dc characteristics test conditions table 6. test specifications figure 15. test setup parameter description test conditions min typ max unit i cc1 sequential read current t cycle =50 ns, ce#=v il , i out =0 ma ? 10 20 ma i cc2 command, address input current t cycle =50 ns, ce#=v il ? 10 20 ma i cc3 data input current ? 10 20 ma i cc4 program current ? 10 20 ma i cc5 erase current ? 10 20 ma i sb1 standby current (ttl) ce#=v ih ? ? 1 ma i sb2 standby current (cmos) ce#=v cc ?0.2 v, wp#= se# = 0v/v cc ? 10 50 a i li input leakage current v in = 0 v to 3.6 v ? ? 10 a i lo output leakage current v out = 0 v to 3.6 v ? ? 10 a v ih input high voltage all i/o pins 2.0 ? v ccq + 0.3 v all except i/o pins 2.0 ? v cc + 0.3 v v il input low voltage, all inputs ?0.3 ? 0.8 v v oh output high voltage i oh = ?400 a, v cc = v ccq v cc ? 0.3 ? ? v v ol output low voltage i ol =2.1 ma, v cc = v ccq ? ? 0.4 v i ol (ry/by#) output low current (ry/by#) v ol =0.4 v 8 10 ? ma test conditions v cc = 3.0 v 10% v cc = 3.3 v 10% unit output load 1 ttl gate output load capacitance, c l (including jig capacitance) 50 100 pf input rise and fall times 5 ns input pulse levels 0.0 ? 2.4 v input timing measurement reference levels 1.5 v output timing measurement reference levels 1.5 v c l device under test 6.2 k ? 2.7 k ? 3.3 v
28 am30lv0064d ac characteristics command, data, and address input normal operation notes: 1. time is dependent on value of pull-up resistor at ry/by# pin. 2. for customers using v ccq > 3.6 v, t rea = 40 ns. parameter description min max unit jedec std t als ale setup time 0 ? ns t alh ale hold time 10 ? ns t cls cle setup time 0 ? ns t clh cle hold time 10 ? ns t ces ce# setup time 0 ? ns t ceh ce# hold time 10 ? ns t ds data setup time 20 ? ns t dh data hold time 10 ? ns t wc write cycle time 50 ? ns t wp we# pulse width 30 ? ns t wh we# pulse width high 15 ? ns parameter description min max unit jedec std t alre ale to re# delay for data read 50 ? ns t ar ale to re# delay for id and manufacturer read 100 ? ns t ceh ce# pulse width high (to abort sequential page read latency) 100 ? ns t cels ce# low to status output valid ? 45 ns t chz ce# high to output high impedance ? 20 ns t cr ce# low to re# low 100 ? ns t cry ce# high to ry/by# high (during abort of sequential page read latency) ? 50 + t (note 1) ns t rc read cycle time 50 ? ns t rp re# pulse width 35 ? ns t reh re# pulse width high 15 ? ns t rea re# access time for data read (note 2) ? 35 ns t rea2 re# access time for id and manufacturer read ? 35 ns t rhz re# high to output high impedance 15 30 ns t rls re# low to status output valid ? 35 ns t whr we# high to re# low 60 ? ns t ozr output high impedance to re# low 0 ? ns t rb last re# rising edge to ry/by# low ? 100 ns t rr ry/by# high to re# low 20 ? ns t wb we# high to ry/by# low ? 100 ns t r transfer time from flash array to data register ? 7 s t rst reset time (read/program/erase/after erase suspend) ? 5/10/500/5 s
am30lv0064d 29 ac characteristics mode selection notes: 1. se# must be asserted during read mode command input during ?read spare area? (50h) cle cycle. 2. the ?reset? (ffh) or ?read status? (70h) command may be written to the device during busy (ry/by# is logic low). key to switching waveforms ale cle we# ce# re# se# wp# ry/by# mode l h l h l/x (note 1) x h read mode command input h l l h x x h address input l h l h x h l/h (note 2) write mode command input h l l h x h h address input l l l h l/h h h data input l l h l l/h x h sequential read and data output l l h l h l/h x l during read (busy) x x x x x l/h h l during program (busy) x x x x x x h l during erase (busy) x x x x x x l x write protect x x x h x x x x standby waveform inputs outputs steady changing from h to l changing from l to h don?t care, any change permitted changing, state unknown does not apply center line is high impedance state (high z)
30 am30lv0064d ac characteristics figure 16. command input cycle figure 17. address input cycle ce# cle ale we# i/o7-0 t ds t dh t wp t als t alh t cls t clh t ces t ceh se# command dependent cle ale we# i/o7-0 t ces t als t cls t wc t wp t wh t ds t dh t alh a7-a0 a16-a9 a22-a17 ce# se#
am30lv0064d 31 ac characteristics figure 18. data input cycle figure 19. serial read cycle ce# cle ale we# i/o7-0 t ceh t clh t ds t dh din 0 t als t wc t wp t wh din 1 din 511 se# ce# r y/by# re# i/o7-0 t chz t rr t reh t rp t rc dout command dependent dout dout t rea t rhz se#
32 am30lv0064d ac characteristics figure 20. status read cycle figure 21. read data ce# t chz 70h status cle ale we# re# i/o7-0 ry/by# t ces t cls t ceh t clh t cels t cr t cls t wp t whr t ds t dh t ozr t rls t rhz ce# cle ale we# re# i/o7-0 ry/by# t ces t ceh t cry t chz t cls t clh t alh t alre t r t wb t rr t rc t rhz t rb t ds t dh t wc 00h/01h a7-a0 a16-a9 a22-a17 dout n dout 527 se#
am30lv0064d 33 ac characteristics figure 22. read data (interrupted by ce#) figure 23. read spare area ce# cle ale we# re# i/o7-0 ry/by# t ces t chz t cls t clh t alh t alre t r t rr t rc t rhz t ds t dh t wc 00h/01h a7-a0 a16-a9 a22-a17 dout n dout 527 t alh t als t rea se# t wb ce# cle ale we# re# i/o7-0 ry/by# t ces t cls t clh t alh t alre t r t rr t rc t wc 50h a7-a0 a16-a9 a22-a17 dout 512+n dout 527 t alh t als t rea t ceh t dh t ds se# t wb
34 am30lv0064d ac characteristics figure 24. sequential read figure 25. page program ce# cle ale we# re# i/o7-0 r y/by# 00h a7-a0 a16-a9 a22-a17 dout n dout 527 t r dout 0 dout 527 t r page m page m + 1 se# ce# cle ale we# re# i/o7-0 ry/by# 80h a7-a0 a16-a9 a22-a17 70h i/o 0 din n t ces din 527 10h t cls t clh t cls t alh t als t alh t als t wc t dh t ds t wb t pgm se#
am30lv0064d 35 ac characteristics figure 26. block erase figure 27. erase suspend ce# cle ale we# re# i/o7-0 ry/by# 60h a16-a9 a22-a17 70h i/o 0 t ces d0h t cls t clh t cls t alh t als t alh t als t dh t ds t wb t ers t wc se# ce# cle ale we# re# i/o7-0 ry/by# 60h a16-a9 a22-a17 b0h i/o 5 t ces d0h t cls t clh t cls t alh t als t alh t als t dh t ds t wb t wc se#
36 am30lv0064d ac characteristics figure 28. erase resume figure 29. sequential page program ce# cle ale we# re# i/o7-0 ry/by# d0h i/o 0 t ers 70h t wb se# ce# cle ale we# re# i/o7-0 ry/by# 80h 10h 70h i/o 0 80h 10h 70h i/o 0 (page m) data input data input a7-a0 a16-a9 a22-a17 program page m program page m + 1
am30lv0064d 37 ac characteristics figure 30. id and manufacturer read figure 31. write protect (wp#) timing during power transitions ce# 90h t ces t cr t ceh t cls t clh t alh t als t cls t ar t alh t ds t dh t rea2 t rea2 cle ale we# re# i/o7-0 ry/by# 00h 01h e6h se# vcc wp# ale, cle, ce#, re#, we# 0 ns (min) 0 ns (min) 2.5 v (min) 2.5 v (min) se#
38 am30lv0064d program and erase characteristics valid blocks note: the j40 device is guaranteed to ship with all valid blocks (no invalid blocks). latchup characteristics note: includes all pins except v cc . test conditions: v cc = 3.0 v, one pin at a time. tsop ii pin capacitance notes: 1. sampled, not 100% tested. 2. test conditions t a = 25c, f = 1.0 mhz. data retention symbol parameter min typ max unit t r read data transfer time ? 6.5 7 s t pgm page program time ? 0.2 1.0 ms t ers block erase time ? 2 10 ms symbol parameter min typ max unit j40 n v/b number of valid blocks 1024 1024 1024 blocks description min max input voltage with respect to v ss on all pins except i/o pins ?1.0 v 12.5 v input voltage with respect to v ss on all i/o pins ?1.0 v v cc + 1.0 v v cc current ?100 ma +100 ma parameter symbol parameter description test setup typ max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8.5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf parameter description test conditions min unit minimum pattern data retention time 85 c 10 years
am30lv0064d 39 revision summary revision a (december 1998) initial release. revision b (december 1998) distinctive characteristics fast read and program performance: noted that spec - ifications are typical. command set: moved erase suspend/resume com - mands from basic to superset commands. general description modified description of embedded erase. functional pin description address latch enable: clarified description relating to address and data registers. read enable: changed t rsto to t rls . cell layout and address assignment figure 1: split 512 byte data register into two 256 byte registers. added representation of one page (528 bytes) to figure. ordering information deleted extended temperature range. command definitions added note 8 to table. device operations first paragraph: clarified description of command decoder. timing diagrams?all se# waveforms in section: added waveform, or modified existing waveform to show where this input is don?t care. erase suspend and erase resume: noted that both are amd superset commands. figure 9, program operations flow chart: noted por - tion that may be required to exceed guaranteed endurance. operating ranges deleted references to extended temperature and reg - ulated voltage range. dc characteristics added test specifications table and figure. ac characteristics normal operation table: clarified descriptions of t ceh , t cr , and t cry . mode selection table: added notes. modified mode column to show 1st and 2nd rows refer to read mode, and 3rd and 4th rows refer to write mode. changed the following: se# for read mode, command input to l/x; ry/by# for write mode, command input to l/h; se# and wp# for standby mode to x. timing diagrams?all se# waveforms in section: added waveform, or modified existing waveform to show where input is don?t care. physical dimensions added tsop ii package drawings. general description added second paragraph. ordering information added fbga designator. in performance range de - scription, changed ?sectors? to ?blocks.? device operations in fourth paragraph, third sentence, deleted the phrase ?during erase.? in the fifth paragraph, changed ?read data? to ?wait for.? noted in the paragraph headings for gapless read, erase suspend, and erase resume that commands are superset. page program: in the second paragraph, fourth sen - tence, clarified that after ten consecutive partial program operations within a given page, the block containing that page is erased. operating ranges added v ccq supply voltage ratings. dc characteristics test specifications table: split the value column into two columns describing test conditions for different voltage ranges. ac characteristics in various figures, added breaks in waveforms where missing, to match other waveforms in the same figure. erase suspend figure: in the i/o7-0 waveform, changed the last data to i/o 5. status read cycle, read data, and read data (inter - rupted by ce#), and read spare area figures: changed the beginning of the t wb parameter to match the beginning of the t alh and t r parameters. physical dimensions added the fbe040 drawing.
40 am30lv0064d revision b+3 (march 8, 1999) ordering information changed nomenclature for the fbe040 fbga pack - age to wg. revision b+4 (april 21, 1999) physical dimensions corrected the bsc length and width dimensions in the fbe040 drawing for the ball grid array. revision b+5 (june 17, 1999) global deleted references to k40 ordering part number and commercial temperature range. distinctive characteristics endurance is now 10,000 cycles. added bullets for in - dustrial range and 100% good blocks. ac characteristics changed t wh to 20 ns. added note for t rea . revision c (may 19, 2000) global changed the data sheet designation from ?advance in - formation? to ?preliminary.? only minor parameter changes, if any, may occur. changes to speed, pack - age, and temperature range combinations may also appear in future data sheet revisions. connection diagrams changed nc to rfu (reserved for future use) on the following: pin 6 on standard tsop-ii, pin 39 on re - verse tsop-ii, and ball e1 on fbga. pin configuration added definition of rfu. functional pin description address latch enable (ale): added ale signal re - quirement for address sequence. read data, gapless read, read spare area, and input data and page program figures added ce# don?t care areas to waveforms. added notes to figures. page program description in second paragraph, modified statement on partial page programming. program operations flow chart figure added address pointed command box below start box. ac characteristics normal operation table: modified note 2. physical dimensions replaced figures with more detailed illustrations. revision c+1 (june 23, 2000) ordering information corrected valid combination and package marking for fbga package. revision c+2 (august 14, 2000) dc characteristics table added v cc = v ccq as test conditions for v ol and v oh . ac characteristics command, address, and data input table: changed t wp from 25 to 30 ns, and t wh from 20 to 15 ns. revision c+3 (october 6, 2000) global removed ?preliminary? status from data sheet. dc characteristics table deleted reset# as a test condition for i sb2 ; the device does not have that input. revision c+4 (october 19, 2004) added statement to cover sheet and first document page indicating this device is not offered for new designs. added colophon and updated trademarks. colophon the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limita - tion, ordinary industrial use, general offi ce use, personal use, and household use, but are not designed, developed and manufac tured as con - templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in we apon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). please note that spansion llc will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. any semic onductor devices have an inherent chance of failure. you must protect agains t injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operat - ing conditions. if any products described in this document represent goods or technologies subject to certain restrictions on e xport under the foreign exchange and foreign trade law of japan , the us export administration regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products.
am30lv0064d 41 trademarks and notice the contents of this document are subject to change without notice. this document may contain information on a spansion llc pro duct under development by spansion llc. spansion llc reserves the right to change or discontinue work on any product without notice. the information i n this document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. spansion llc assumes no liability for any damages of any kind arising out of the use of the information in this document. copyright ?2004 spansion llc. all rights reserved. spansion, the spansion logo, and mirrorbit are trademarks of spansion llc. o ther company and product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

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